Conference Reports: INTERNATIONAL CONFERENCE ON NARROW-GAP SEMICONDUCTORS AND RELATED MATERIALS Gaithersburg, MD June 12–15, 1989
نویسندگان
چکیده
The Semiconductor Electronics Division at the National Institute of Standards and Technology (NIST) hosted an International Conference on Narrow-Gap Semiconductors and Related Materials in Gaithersburg, MD on June 12-15, 1989. A brief background on narrow-gap semiconductors (NGSs) is given in this paper, along with an overview of the conference itself. The major section of this report is devoted to highlights from each of the invited papers in order to put this field of semiconductor research and technology in perspective. The Conference Proceedings has been published as a special issue of Semiconductor Science and Technology (Institute of Physics Publishing, Bristol, March 1990, Volume 5).
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